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Infineon expands GaN HEMT lineup


Infineon is including two extra households of excessive and medium voltage GaN transistors to its portfolio of CoolGaN HEMTs spanning 40 V to 700 V. In line with the corporate, this growth will allow clients to make use of gallium nitride in a broader array of functions that assist drive digitalization and decarbonization.

G5 and G3 generations of CoolGaN gadgets are manufactured on 8-in. in-house foundry processes in Malaysia and Austria. The 650-V G5 household addresses functions in client, knowledge heart, industrial, and photo voltaic markets. The medium voltage G3 transistor collection helps 4 voltage courses: 60 V, 80 V, 100 V, and 120 V. It additionally features a 40-V bidirectional change. The G3 household targets motor drive, telecom, knowledge heart, photo voltaic, and client functions.

The CoolGaN 650-V G5 can be out there in This fall 2024. The medium voltage CoolGaN G3 can be out there in Q3 2024. Samples can be found now. For extra data on Infineon’s CoolGaN high-electron-mobility transistors (HEMTs), click on right here.

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